教师信息

职称：教授

通讯地址：湖北省武汉市新洲区平江东路630号湖北大学长江新区校区

研究方向

神经形态器件与类脑芯片，存算一体算法与电路设计，高密度信息存储器件与集成，先进三维集成

教育背景

(1) 2010年 四川大学 学士；

(2) 2015年 剑桥大学卡文迪许实验室（University of Cambridge, Cavendish Laboratory） 联合培养；

(3) 2016年 电子科技大学 博士。

工作履历

(1) 2017至 2019 湖北大学物电学院 讲师；

(2) 2017,2018 台湾中山大学 访问学者；

(3) 2019 至今 湖北大学集成电路学院 教授。

学术兼职

(1) AFM,IEEE EDL/TED, APL,ACS AMI, AEM等期刊审稿人；

奖励与荣誉

获湖北省“楚天学子”称号

学术成果、科研项目

主持和参与多项国家自然科学基金项目，团队近年在IEEE EDL/TED、APL、AEM等微电子领域顶级期刊发表研究论文30余篇，申请国家发明专利30余项。坚持前沿基础研究与解决先进工程问题双导向，主持国家自然科学基金项目、湖北省科技重大专项、企业委托项目10余项，与长江存储、武汉新芯等企业开展深入合作，育人导向正确，发展态势良好。毕业学生在长江存储、武汉新芯、新思科技等半导体行业龙头企业从事芯片设计、制造、失效分析等工作。指导多名学生于北京大学、复旦大学、武汉大学、华中科技大学、电子科技大学、中国科学院大学等著名高校和研究所继续深造。

代表性成果：

[1] CHEN A, FU Y, MA G*, et al. The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping [J]. IEEE Electron Device Letters, 2022, 43(6): 870-3.

[2] MA G, YANG Z, CHEN A, et al. Improved Selectivity and Reliability in NbOₓ-Based Selector by Co-Approaches of Al Doping and Ta Interlayer [J]. IEEE Electron Device Letters, 2022, 43(9): 1444-6.

[3] CHEN A, ZHANG Z, MA G*, et al. Comprehensive Regulation of the Threshold Oscillation for Neuromorphic Systems Based on Cryogenic Performance of NbO₂ Device [J]. IEEE Electron Device Letters, 2021, 42(5): 692-5.

[4] MA G*, HE Y, LIU C, et al. Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes [J]. IEEE Electron Device Letters, 2019, 40(8): 1257-60.

[5] CHEN A, HE Y, MA G*, et al. Improved uniformity and threshold voltage in NbOx-ZrO2 selectors [J]. Applied Physics Letters, 2021, 119(7).

[6] CHEN A, MA G*, ZHANG Z, et al. Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer [J]. Advanced Electronic Materials, 2019, 6(1)

[7] YANG G, CHEN A, LIU N, et al. Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbOx [J]. IEEE Transactions on Electron Devices, 2023, 70(1): 65-9.

[8] ZHAO X, CHEN A, JI J, et al. Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode [J]. IEEE Transactions on Electron Devices, 2021, 68(5): 2255-9.

[9] ZHANG Z, CHEN A, MA G*, et al. Controllable Functional Layer and Temperature-Dependent Characteristic in Niobium Oxide Insulator–Metal Transition Selector [J]. IEEE Transactions on Electron Devices, 2020, 67(7): 2771-7.

[10] HE Y, MA G*, CAI H, et al. Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices [J]. IEEE Transactions on Electron Devices, 2019, 66(1): 619-24.

[11] BAMAO A, XIA Y, MA G*, et al. Realization of memristor and synaptic simulation behaviors based on LiNbOx [J]. Ceramics International, 2023, 49(6): 10083-8.

[12] LIN Z, SU J, WANG Y, et al. Atomic-scale investigation on endurance mechanism of the GeTex-based OTS device by Si doping [J]. Vacuum, 2023, 213.

[13] ZHANG P, MA G*, XIONG Z, et al. Studying of threshold switching behavior based on programmable metallization cells selector by KMC method [J]. Vacuum, 2023, 218.

[14] YU Z-Y, ZHAO J-Y, MA G-K, et al. High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications [J]. Rare Metals, 2022, 41(11): 3671-6.

[15] CHEN D, CHEN A, YU Z, et al. Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films [J]. Ceramics International, 2021, 47(16): 22677-82.

  [16]LIU N, YANG G, HE Y, et al. Realization of Synapse Behaviors Based on Memristor and Simulation Study With KMC Method [J].IEEE Journal of the Electron Devices Society, 2020, 8: 981-5.